The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Dec. 19, 2002
Applicant:
Inventors:
Yeou-Ming Lin, Jungli, TW;
Tuo-Hung Hou, Chia-Yi, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/980 ; H01L 3/1112 ; H01L 3/10288 ;
U.S. Cl.
CPC ...
H01L 2/980 ; H01L 3/1112 ; H01L 3/10288 ;
Abstract
A new Inter Poly Dielectric (IPD) layer is provided for use in creating ultra-small gate electrodes. A first and a second high-k dielectric film are provided which remain amorphous at relatively high processing temperatures. The first high-k dielectric film is of Al O —ZrO —Al O , the second high-k dielectric film is aluminum doped ZrO or HfO .
Lin, Yeou-Ming. (2004). Layer of high-k inter-poly dielectric (U.S. Patent No. 6753224). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6753224
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile