Hsinchu, Taiwan

Yang-Cheng Wu

This inventor holds 6 USPTO granted patents and 2 published patent applications. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yang-Cheng Wu. Retrieved from https://idiyas.com/inventor/yang-cheng-wu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 6 

% Patents Active = 100.0

Average Co-Inventor Count = 5.4

ph-index = 2

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2019-2026

Loading Chart...
6 patents (USPTO):Explore Patents

Title: Yang-Cheng Wu: Innovator in Semiconductor Manufacturing

Introduction

Yang-Cheng Wu is an inventor based in Hsinchu City, Taiwan. He has made significant contributions to the field of semiconductor manufacturing. Although he currently holds no granted patents, his innovative ideas are reflected in his patent applications.

Latest Patent Applications

Yang-Cheng Wu's notable patent application is titled "METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE." This application outlines a method for creating a semiconductor device that involves forming an n-type source/drain epitaxial layer and a p-type source/drain epitaxial layer. The process includes the formation of a dielectric layer over these epitaxial layers, with specific openings created to expose parts of each layer. The application details that the recessing amount of the n-type source/drain epitaxial layer differs from that of the p-type source/drain epitaxial layer, showcasing a unique approach to semiconductor device manufacturing.

Conclusion

Yang-Cheng Wu's work in semiconductor manufacturing highlights his innovative spirit and dedication to advancing technology in this critical field. His patent application reflects a thoughtful approach to improving semiconductor devices, and it will be interesting to see how his ideas develop in the future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…