The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jun. 04, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yang-Cheng Wu, Hsinchu, TW;

Yun-Hua Chen, Zhubei, TW;

Wen-Kuo Hsieh, Taipei, TW;

Huan-Just Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 21/306 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/30608 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 29/0843 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

In an embodiment, a method includes: depositing a protective layer on a source/drain region and a gate mask, the gate mask disposed on a gate structure, the gate structure disposed on a channel region of a substrate, the channel region adjoining the source/drain region; etching an opening through the protective layer, the opening exposing the source/drain region; depositing a metal in the opening and on the protective layer; annealing the metal to form a metal-semiconductor alloy region on the source/drain region; and removing residue of the metal from the opening with a cleaning process, the protective layer covering the gate mask during the cleaning process.


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