The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Nov. 11, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Lien Huang, Jhubei, TW;
Tsai-Chun Li, Hsinchu, TW;
Huan-Just Lin, Hsinchu, TW;
Huang-Ming Chen, Hsinchu, TW;
Yang-Cheng Wu, Hsinchu, TW;
Cheng-Hua Yang, Zhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); G03F 7/36 (2006.01); G03F 7/20 (2006.01); H01J 37/32 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); G03F 7/2004 (2013.01); G03F 7/36 (2013.01); H01J 37/32422 (2013.01); H01L 21/0274 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01J 37/321 (2013.01); H01J 37/32715 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/20228 (2013.01); H01J 2237/334 (2013.01);
Abstract
Embodiments of the present disclosure may be used for patterning a layer in a 5 nm node or beyond fabrication to achieve an end-to-end distance below 35 nm. Compared to the state of the art technology, embodiments of the present disclosure reduce cycle time and cost of production from three lithographic processes and four etching processes to one lithographic process and three etch processes.