Yan Yan

Title: Yan Yan - Innovator in Semiconductor Technology

Introduction

Yan Yan is a prominent inventor based in Shanghai, China, known for his contributions to semiconductor technology. With a total of three patents to his name, Yan has made significant advancements in critical dimension error analysis and shallow trench isolation structures.

Latest Patents

Yan's latest patents include a critical dimension error analysis method, which provides a systematic approach to measuring and correcting critical dimension values during lithography processes. This method enhances the accuracy of semiconductor manufacturing by removing extreme outliers and utilizing a reconstruction model fitting method. Another notable patent is for a shallow trench isolation structure and its fabrication method. This invention outlines a process for creating a shallow trench in a semiconductor substrate, followed by the formation of insulating layers, which is crucial for improving device performance in integrated circuits.

Career Highlights

Throughout his career, Yan has worked with leading companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation and Shanghai IC R&D Center Co., Ltd. His experience in these organizations has allowed him to refine his expertise and contribute to innovative solutions in semiconductor manufacturing.

Collaborations

Yan has collaborated with several professionals in his field, including Jun Yang and Xueru Yu, who have contributed to his projects and research endeavors.

Conclusion

Yan Yan's work in semiconductor technology exemplifies the impact of innovation on the industry. His patents reflect a commitment to enhancing manufacturing processes and improving the performance of semiconductor devices.