The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

May. 04, 2015
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Yan Yan, Shanghai, CN;

Jun Yang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/31055 (2013.01);
Abstract

A method for forming an isolation member in a trench of a substrate may include the following steps: performing a first deposition process to form a first isolation material set, which is at least partially positioned in the trench; partially removing the first isolation material set, such that a remaining portion of the first isolation material set remains in the trench; after the first isolation material set has been partially removed, performing a fluorine-reduction process on at least the remaining portion of the first isolation material set; after the fluorine-reduction process, performing a second deposition process to form a second isolation material set, which is at least partially positioned in the trench, wherein the second isolation material set includes the remaining portion of the first isolation material set; and processing the second isolation material set for forming the isolation member.


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