This inventor holds 2 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1999-2001.
Company Filing History:
Years Active: 1999-2001
Title: Y M Tsui: Innovator in Semiconductor Technology
Introduction
Y M Tsui is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods that enhance the reliability of semiconductor structures. With a total of 2 patents to his name, Tsui's work addresses critical issues in semiconductor manufacturing.
Latest Patents
Tsui's latest patents include innovative methods for forming zig-zag bordered openings in semiconductor structures. The first patent discloses a via plug formed in a zig-zag bordered opening, which significantly reduces film stress in a barrier/glue layer of TiN. This advancement helps eliminate the occurrence of volcano defects, which can lead to delamination or peeling of the TiN layer from the contact opening. The method involves using a mask with a zig-zag pattern during the photomasking step on the semiconductor device. The second patent reiterates this method, emphasizing its ease of implementation and effectiveness in improving semiconductor reliability.
Career Highlights
Y M Tsui is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work has been instrumental in advancing the manufacturing processes that ensure the quality and performance of semiconductor devices.
Collaborations
Tsui has collaborated with notable colleagues, including C H Chen and Y C Chao, who contribute to the innovative environment at their workplace. Their combined expertise fosters a culture of creativity and problem-solving in semiconductor technology.
Conclusion
Y M Tsui's contributions to semiconductor technology through his innovative patents highlight his role as a key inventor in the field. His work not only addresses critical manufacturing challenges but also paves the way for future advancements in semiconductor reliability.