Taiwan Semiconductor Manufacturing Comp. Ltd.

Y M Tsui

C H Chen

W R Chang

Y C Chao

The present invention discloses a via plug formed in a zig-zag bordered opening in a semiconductor structure wherein the film stress in a barrier/glue layer TiN can be significantly reduced to eliminate the occurrence of volcano defect in which delamination or peeling of the TiN layer from the contact opening occurs. The via plug can be formed in a process by providing a mask that has a desirable zig-zag pattern during a photomasking step performed on the semiconductor device.

Method for forming zig-zag bordered openings in semiconductor structures and structures formed

The present invention discloses a method for forming a zig-zag bordered opening in a semiconductor structure such that the film stress in a barrier/glue layer of TiN can be significantly reduced to eliminate the occurrence of volcano defect in which delamination or peeling-off of the TiN layer from the contact opening occurs. The method can be easily carried out by providing a mask that has a desirable zig-zag pattern during a photomasking step performed on the semiconductor device.

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Hsin-Chu, Taiwan

Y M Tsui