The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2001

Filed:

Jul. 10, 1998
Applicant:
Inventors:

C. H. Chen, Hsin-Chu, TW;

Y. C. Chao, Hsin-Chu, TW;

Y. M. Tsui, Hsin-Chu, TW;

W. R. Chang, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
Abstract

The present invention discloses a via plug formed in a zig-zag bordered opening in a semiconductor structure wherein the film stress in a barrier/glue layer TiN can be significantly reduced to eliminate the occurrence of volcano defect in which delamination or peeling of the TiN layer from the contact opening occurs. The via plug can be formed in a process by providing a mask that has a desirable zig-zag pattern during a photomasking step performed on the semiconductor device.


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Chen, C.. (2001). Method for forming zig-zag bordered openings in semiconductor structures and structures formed (U.S. Patent No. 6316835). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6316835

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