The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 1999

Filed:

Feb. 28, 1997
Applicant:
Inventors:

C H Chen, Hsin-chu, TW;

Y C Chao, Hsin-chu, TW;

Y M Tsui, Hsin-chu, TW;

W R Chang, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438637 ; 438666 ; 438669 ; 438672 ; 438700 ;
Abstract

The present invention discloses a method for forming a zig-zag bordered opening in a semiconductor structure such that the film stress in a barrier/glue layer of TiN can be significantly reduced to eliminate the occurrence of volcano defect in which delamination or peeling-off of the TiN layer from the contact opening occurs. The method can be easily carried out by providing a mask that has a desirable zig-zag pattern during a photomasking step performed on the semiconductor device.


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