Xun Gu

Title: Xun Gu: Innovator in Semiconductor Technology

Introduction

Xun Gu is a prominent inventor based in Miyagi, Japan, known for his significant contributions to semiconductor technology. With a total of three patents to his name, Gu has developed innovative methods that enhance the reliability and efficiency of semiconductor devices.

Latest Patents

One of Gu's latest patents is a wiring structure that features an interlayer insulating film and a wiring line without a barrier layer between them. This invention aims to improve the contact between an insulating film and a wiring member, thereby enhancing the reliability of semiconductor devices. The manufacturing method includes forming a CF film on a semiconductor substrate, creating grooves that correspond to a wiring pattern, and embedding a copper wiring member in these grooves. Another notable patent involves a method for etching a film containing transition metals. This method utilizes a substrate processing apparatus designed to generate plasma and supply neutral particles of oxygen and rare gas atoms to the processing chamber, facilitating the etching process.

Career Highlights

Xun Gu has worked at esteemed institutions such as Tohoku University and Tokyo Electron Limited. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Gu has collaborated with notable colleagues, including Seiji Samukawa and Takenao Nemoto, further enhancing his research and development efforts in the field.

Conclusion

Xun Gu's innovative work in semiconductor technology has made a significant impact on the industry. His patents reflect a commitment to improving device reliability and manufacturing processes.