Tohoku University

Tokyo Electron Limited

Zeon Corporation

Xun Gu

Tadahiro Ohmi

Hirokazu Matsumoto

Akinobu Teramoto

Seiji Samukawa

Takehisa Saito

Takenao Nemoto

Yugo Tomita

Akihide Shirotori

Provided are a semiconductor device and semiconductor-device manufacturing method that make it possible to improve the contact between an insulating film and a wiring member and the reliability thereof. This method for manufacturing a semiconductor device () includes a step in which a CF film () is formed on top of a semiconductor substrate (), a step in which grooves (C) corresponding to a wiring pattern (P) are formed in the CF film (), and a step in which a copper wiring member () is embedded in the grooves (C).

Wiring structure having interlayer insulating film and wiring line without a barrier layer between

Provided is a method of etching a transition metal-containing film using a substrate processing apparatus. The substrate processing apparatus includes: a processing container configured to define a processing chamber and a plasma generation chamber; and a shielding unit provided between the processing chamber and the plasma generation chamber and formed with a plurality of openings to communicate the processing chamber and the plasma generation chamber with each other. The shielding unit has a shielding property against ultraviolet rays. The method includes: supplying neutral particles of oxygen atoms to the processing chamber in which a workpiece is accommodated by generating plasma of a first gas containing oxygen in the plasma generation chamber; supplying a second gas to complex a transition metal oxidized while supplying the neutral particles of oxygen to the processing chamber; and supplying neutral particles of rare gas atoms to the processing chamber by generating plasma of a rare gas.

Method for etching film having transition metal

Provided is a method of manufacturing a semiconductor device of a multilayer wiring structure that comprises a CFfilm as an interlayer insulating film, that can make the most of the advantage of the CFfilm having a low dielectric constant, and that can prevent degradation of the properties of the CFfilm due to CMP. The method of this invention includes (a) forming a CFfilm, (b) forming a recess of a predetermined pattern on the CFfilm, (c) providing a wiring layer so as to bury the recess and to cover the CFfilm, and (d) removing the excess wiring layer on the CFfilm other than in the recess by CMP (Chemical Mechanical Polishing), thereby exposing a surface of the CFfilm, wherein (e) nitriding the surface of the CFfilm is provided before or after (b).

Method of manufacturing a semiconductor device

Growing community of inventors

Miyagi, Japan

Xun Gu