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For the Inventor, By the Inventor

Stamford, CT, United States of America

Xueping Xu

USPTO Granted Patents = 36

 

Average Co-Inventor Count = 3.4

ph-index = 12

Forward Citations = 1,104(Granted Patents)


Location History:

  • Danbury, CT (US) (1999 - 2001)
  • Stanford, CT (US) (2006 - 2008)
  • Stamford, CT (US) (2002 - 2016)

Company Filing History:

goldMedal14 out of 2,307 
 
Cree Gmbh
 patents
silverMedal9 out of 11 
 
Kyma Technologies, Inc.
 patents
bronzeMedal8 out of 622 
 
Advanced Technology Materials, Inc.
 patents
4. 1 out of 24 
 
Silicon Video, Inc.
 patents
5. 1 out of 258 
 
Nantero, Inc.
 patents
6. 1 out of 161 
 
Candescent Technologies Corporation
 patents
7. 1 out of 22 
 
Candescent Intellectual Property Services, Inc.
 patents
8. 4 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1999-2016

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36 patents (USPTO):
1. 9263266 - Group III nitride articles and methods for making same (2016-02-16),
2. 9082890 - Group III nitride articles having nucleation layers, transitional layers, and bulk layers (2015-07-14),
3. 8871556 - Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement (2014-10-28),
4. 8728236 - Low dislocation density III-V nitride substrate including filled pits and process for making the same (2014-05-20),
5. 8637848 - Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement (2014-01-28),
6. 8562937 - Production of carbon nanotubes (2013-10-22),
7. 8435879 - Method for making group III nitride articles (2013-05-07),
8. 8378463 - Orientation of electronic devices on mis-cut substrates (2013-02-19),
9. 8349711 - Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement (2013-01-08),
10. 8212259 - III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates (2012-07-03),
11. 8202793 - Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same (2012-06-19),
12. 8043731 - Vicinal gallium nitride substrate for high quality homoepitaxy (2011-10-25),
13. 7972711 - Large area, uniformly low dislocation density GaN substrate and process for making the same (2011-07-05),
14. 7897490 - Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement (2011-03-01),
15. 7884447 - Laser diode orientation on mis-cut substrates (2011-02-08),

Title: The Innovative Contributions of Xueping Xu in Optoelectronic Devices

Introduction: Xueping Xu, based in Stamford, CT, is a prolific inventor with a remarkable portfolio of 36 patents. His innovative work primarily focuses on Group III nitride compounds, which play a critical role in the development of optoelectronic and electronic devices.

Latest Patents: Among his latest advancements, Xu has developed patents related to Group III nitride articles and the methods for their fabrication. This includes patents for Group III (Al, Ga, In)N single crystals, articles, and films that are essential for producing a variety of optoelectronic devices, such as light-emitting diodes (LEDs), laser diodes (LDs), and photodetectors. Furthermore, he has also worked on creating Group III nitride articles that incorporate nucleation layers, transitional layers, and bulk layers, enhancing the performance of high electron mobility transistors (HEMTs).

Career Highlights: Xueping Xu’s career is marked by significant contributions to the field of materials science and semiconductor technology. His innovative approaches have led to the refinement of techniques necessary for the production of high-quality nitride crystals, thereby advancing the capabilities of electronic and optoelectronic devices.

Collaborations: Throughout his career, Xu has worked alongside esteemed colleagues such as George R. Brandes and Robert P. Vaudo. His professional journey includes tenure at prominent companies like Cree GmbH and Kyma Technologies, Inc., where he has contributed to cutting-edge research and product development in the field of nitride semiconductors.

Conclusion: Xueping Xu’s contributions to the field of optoelectronics and semiconductor technology through his numerous patents signify his impact as an inventor. His continued innovation in Group III nitride materials and processes exemplifies the vital role of inventors in driving technological advancements that shape the future of electronic devices.

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