The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Dec. 06, 2002
Jeffrey S. Flynn, Litchfield, CT (US);
George R. Brandes, Southbury, CT (US);
Robert P. Vaudo, New Milford, CT (US);
David M. Keogh, La Jolla, CA (US);
Xueping Xu, Stamford, CT (US);
Barbara E. Landini, North Attleboro, MA (US);
Jeffrey S. Flynn, Litchfield, CT (US);
George R. Brandes, Southbury, CT (US);
Robert P. Vaudo, New Milford, CT (US);
David M. Keogh, La Jolla, CA (US);
Xueping Xu, Stamford, CT (US);
Barbara E. Landini, North Attleboro, MA (US);
Cree, Inc., Durham, NC (US);
Abstract
A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer of improved epitaxial quality deposited on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 10, nitrogen source material partial pressure in a range of from about 1 to about 10torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 10microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.