Wake Forest, NC, United States of America

Jeffrey S Flynn

This inventor holds 16 USPTO granted patents and 12 EPO patents. Top assignees: Cree Gmbh, Advanced Technology Materials, Inc.. Active years: 2002-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeffrey S Flynn. Retrieved from https://idiyas.com/inventor/jeffrey-s-flynn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16

% Patents Active = 62.5

EPO Patents = 12 (Patent Applications = 7)

Average Co-Inventor Count = 3.7

ph-index = 8

Forward Citations = 821(Granted Patents)

Location History:

Wolcott, CT (US) (2003)
Raleigh, NC (US) (2010)
Litchfield, CT (US) (2002 - 2012)
Wake Forest, NC (US) (2010 - 2014)

Company Filing History:

Advanced Technology Materials, Inc.

patents

Years Active: 2002-2014

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8698286 - High voltage switching devices and process for forming same (2014-04-15),

2. 8390101 - High voltage switching devices and process for forming same (2013-03-05),

3. 8212259 - III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates (2012-07-03),

4. 8174089 - High voltage switching devices and process for forming same (2012-05-08),

5. 8043731 - Vicinal gallium nitride substrate for high quality homoepitaxy (2011-10-25),

6. 7919791 - Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same (2011-04-05),

7. 7915152 - III-V nitride substrate boule and method of making and using the same (2011-03-29),

8. 7795707 - High voltage switching devices and process for forming same (2010-09-14),

9. 7700203 - Vicinal gallium nitride substrate for high quality homoepitaxy (2010-04-20),

10. 7655197 - III-V nitride substrate boule and method of making and using the same (2010-02-02),

11. 7390581 - Vicinal gallium nitride substrate for high quality homoepitaxy (2008-06-24),

12. 7282744 - III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier (2007-10-16),

13. 7118813 - Vicinal gallium nitride substrate for high quality homoepitaxy (2006-10-10),

14. 6596079 - III-V nitride substrate boule and method of making and using the same (2003-07-22),

15. 6533874 - GaN-based devices using thick (Ga, Al, In)N base layers (2003-03-18),

Certainly! Here is the article about inventor Jeffrey S Flynn:

Title: Innovator Spotlight: Jeffrey S Flynn - Revolutionizing High Voltage Switching Devices

Introduction:

Jeffrey S Flynn, a brilliant inventor based in Wake Forest, NC, has made significant contributions to the field of high voltage switching devices. With an impressive portfolio of 16 patents, Flynn has been at the forefront of innovation in the semiconductor industry.

Latest Patents:

Flynn's latest patents focus on high voltage switching devices and the process for forming them. These cutting-edge structures, including Schottky diode, P-N diode, and P-I-N diode, feature low defect density, crack density, and pit density. They are characterized by thick GaN layers with low dopant concentration, allowing for substantially higher breakdown voltages on both hetero-epitaxial and homo-epitaxial substrates.

Career Highlights:

Throughout his career, Jeffrey S Flynn has worked with prestigious companies such as Cree GmbH and Advanced Technology Materials, Inc. His expertise and innovation have played a pivotal role in developing advanced semiconductor technologies that are shaping the future of high voltage applications.

Collaborations:

Flynn has collaborated closely with industry experts including George R Brandes and Robert P Vaudo. Together, they have leveraged their knowledge and skills to push the boundaries of high voltage semiconductor technology and bring cutting-edge solutions to the market.

Conclusion:

In conclusion, Jeffrey S Flynn stands out as a visionary inventor in the semiconductor industry, with a remarkable track record of patenting innovative high voltage switching devices. His relentless pursuit of excellence and collaboration with industry leaders continue to drive advancements in semiconductor technology, paving the way for a more electrifying future.

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Profile summary based on public USPTO records.