The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Apr. 30, 2003
Jeffrey S. Flynn, Raleigh, NC (US);
George R. Brandes, Raleigh, NC (US);
Robert P. Vaudo, Cary, NC (US);
Jeffrey S. Flynn, Raleigh, NC (US);
George R. Brandes, Raleigh, NC (US);
Robert P. Vaudo, Cary, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
The present invention relates to various switching device structures including Schottky diode (), P—N diode, and P—I—N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers () of low dopant concentration (<1E16 cm−3) grown on a conductive GaN layer (). The devices enable substantially higher breakdown voltage on hetero-epitaxial substrates (<2 KV) and extremely high breakdown voltage on homo-epitaxial substrates (>2 KV).