The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2007
Filed:
May. 06, 2004
Jeffrey S. Flynn, Litchfield, CT (US);
Huoping Xin, Brea, CA (US);
George R. Brandes, Southbury, CT (US);
Jeffrey S. Flynn, Litchfield, CT (US);
Huoping Xin, Brea, CA (US);
George R. Brandes, Southbury, CT (US);
Cree, Inc., Durham, NC (US);
Abstract
A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlGaN, wherein x+y=1, and x≧0.50. In a specific aspect, AIN is used as a migration/diffusion barrier layer at a thickness of from about 5 to about 200 Angstroms, to suppress flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, e.g., a UV LED optoelectronic device.