Brea, CA, United States of America

Huoping Xin


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Huoping Xin: Innovator in III-Nitride Optoelectronic Devices

Introduction

Huoping Xin is a notable inventor based in Brea, California. He has made significant contributions to the field of optoelectronic devices, particularly through his innovative patent related to III-nitride electronic device structures. His work focuses on enhancing the performance and efficiency of these devices.

Latest Patents

Huoping Xin holds a patent for a III-nitride optoelectronic device structure with a high AlGaN diffusion barrier. This invention includes a unique arrangement of doped material, an active region, and a barrier material designed to suppress the transport of dopants into the active region. The barrier material comprises high-Al content AlGaN, where the parameters x and y satisfy the equation x+y=1, with x being greater than or equal to 0.50. A specific aspect of this invention utilizes AIN as a migration/diffusion barrier layer, with a thickness ranging from about 5 to about 200 Angstroms. This design effectively suppresses the flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, such as a UV LED optoelectronic device.

Career Highlights

Huoping Xin is currently associated with Cree GmbH, a company known for its advancements in LED technology and semiconductor solutions. His work at Cree GmbH has allowed him to further develop his expertise in optoelectronic devices and contribute to cutting-edge innovations in the field.

Collaborations

Throughout his career, Huoping Xin has collaborated with esteemed colleagues, including Jeffrey S. Flynn and George R. Brandes. These collaborations have fostered a productive environment for innovation and have led to significant advancements in optoelectronic technologies.

Conclusion

Huoping Xin's contributions to the field of III-nitride optoelectronic devices exemplify his commitment to innovation and excellence. His patent and work at Cree GmbH highlight his role as a leading inventor in this specialized area.

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