The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Nov. 14, 2003
Xueping Xu, Stanford, CT (US);
Robert P. Vaudo, New Milford, CT (US);
Jeffrey S. Flynn, Litchfield, CT (US);
George R. Brandes, Southbury, CT (US);
Xueping Xu, Stanford, CT (US);
Robert P. Vaudo, New Milford, CT (US);
Jeffrey S. Flynn, Litchfield, CT (US);
George R. Brandes, Southbury, CT (US);
Cree, Inc., Durham, NC (US);
Abstract
A III–V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μmAFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III–V nitride-based microelectronic and opto-electronic devices.