David M Keogh

Title: David M Keogh: Innovator in III-V Nitride Microelectronics

Introduction: David M Keogh, based in La Jolla, California, is a distinguished inventor known for his contributions to the field of III-V nitride microelectronics. With a focus on improving the quality of epitaxial materials, Keogh has made significant strides in the development of advanced devices used in various applications.

Latest Patents: Keogh holds a patent for a "III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates." This patent describes a microelectronic device structure that features a III-V nitride homoepitaxial layer, which is deposited on a corresponding III-V nitride material substrate. The innovative processing techniques outlined within his patent include a method for forming this layer utilizing a vapor phase epitaxy (VPE) process. Key parameters mentioned include a V/III ratio ranging from about 1 to about 10, a nitrogen source material partial pressure between about 1 to about 10 torr, growth temperatures spanning from approximately 500 to 1250 degrees Celsius, and a growth rate of about 0.1 to 10 microns per hour. These microelectronic structures are particularly useful in applications such as UV LEDs and high electron mobility transistors.

Career Highlights: David M Keogh currently works at Cree GmbH, a recognized leader in the field of LED technology and semiconductor solutions. His commitment to innovation and quality in microelectronic devices has been influential in pushing the boundaries of technology.

Collaborations: Collaborating with notable professionals such as Jeffrey S Flynn and George R Brandes, Keogh has been integral in advancing research and development initiatives within the company. Their combined expertise has contributed to significant advancements in their respective fields, further elevating the profile of Cree GmbH in the global market.

Conclusion: David M Keogh stands out as an inventor making impactful contributions to the field of microelectronics. His patented work on III-V nitride homoepitaxial materials showcases his dedication to advancing technology and improving device performance. Through his collaborations and ongoing research, Keogh continues to inspire and lead in innovative solutions within semiconductor technology.