The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jan. 17, 2011
Xueping Xu, Stamford, CT (US);
Robert P. Vaudo, Cary, NC (US);
Xueping Xu, Stamford, CT (US);
Robert P. Vaudo, Cary, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Large area single crystal III-V nitride material having an area of at least 2 cm, having a uniformly low dislocation density not exceeding 3×10dislocations per cmof growth surface area, and including a plurality of distinct regions having elevated impurity concentration, wherein each distinct region has at least one dimension greater than 50 microns, is disclosed. Such material can be formed on a substrate by a process including (i) a first phase of growing the III-V nitride material on the substrate under pitted growth conditions, e.g., forming pits over at least 50% of the growth surface of the III-V nitride material, wherein the pit density on the growth surface is at least 10pits/cmof the growth surface, and (ii) a second phase of growing the III-V nitride material under pit-filling conditions.