Hong Kong, China

Xiao Huo

This inventor holds 10 USPTO granted patents and 1 published patent application. Top assignee: Hong Kong Applied Science and Technology Research Institute. Active years: 2013-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiao Huo. Retrieved from https://idiyas.com/inventor/xiao-huo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 

% Patents Active = 90.0

Average Co-Inventor Count = 3.0

ph-index = 4

Forward Citations = 29(Granted Patents)


Company Filing History:


Years Active: 2013-2021

Loading Chart...
10 patents (USPTO):Explore Patents

Title: Innovations of Inventor Xiao Huo

Introduction

Xiao Huo is a prominent inventor based in Hong Kong, CN. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices through innovative modeling and protective technologies.

Latest Patents

One of Xiao Huo's latest patents is titled "Semiconductor device modeling using input pre-processing and transformed targets for training a deep neural network." This invention involves a deep neural network that models semiconductor devices by gathering measurements of test transistors, including gate and drain voltages, as well as transistor width and length. The training data is processed using an input pre-processor that can apply logarithmic transformations or perform Principal Component Analysis (PCA). Instead of using measured drain current as the target for training, a target transformer converts the drain current into a transformed version, such as its derivative or logarithm. The weights of the deep neural network are adjusted during training by minimizing a loss function based on the comparison between the network's output and the transformed drain current.

Another notable patent is for a "Low capacitance and high-holding-voltage transient-voltage-suppressor (TVS) device for electro-static-discharge (ESD) protection." This invention features a well-less Transient Voltage Suppressor (TVS) Silicon-Controlled Rectifier (SCR) with a P+ anode region that is not situated in an N-well. The design includes N+ isolation regions and a deep N+ region formed in a p-substrate, which significantly reduces sidewall capacitance and enhances performance for high-speed applications.

Career Highlights

Xiao Huo is currently employed at the Hong Kong Applied Science and Technology Research Institute Company, Limited. His work at this institution has allowed him to collaborate with other talented professionals in the field, further advancing semiconductor technology.

Collaborations

Some of Xiao Huo's notable coworkers include Xiaowu Cai and Beiping Yan, who contribute to the innovative environment at the research institute.

Conclusion

Xiao Huo's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a leading inventor in the field. His innovative approaches continue to shape the future of semiconductor devices and their applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…