The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Mar. 07, 2019
Hong Kong Applied Science and Technology Research Institute Company, Limited, Hong Kong, HK;
Abstract
A well-less Transient Voltage Suppressor (TVS) Silicon-Controlled Rectifier (SCR) has a P+ anode region that is not in an N-well. The P+ anode regionis surrounded by N+ isolation regions near the surface, and a deep N+ region underneath that is formed in a p-substrate. A N+ cathode region is formed in the p-substrate. The deep N+ region has a doping of 5×10to 5×10/cm, compared to a doping of 1×10/cmfor a typical N-well, or a doping of 1×10to 1×10/cmfor the p-substrate. The high doping in the deep N+ region causes a recombination current that can shunt half of the anode current. Since the deep N+ region is much shallower than an N-well, the sidewall capacitance is greatly reduced, allowing for higher speed applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile