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For the Inventor, By the Inventor

San Jose, CA, United States of America

Xianzhi Tao

This inventor holds 10 USPTO granted patents. Top assignee: Applied Materials, Inc.. Active years: 2002-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xianzhi Tao. Retrieved from https://idiyas.com/inventor/xianzhi-tao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10

% Patents Active = 50.0

Average Co-Inventor Count = 5.5

ph-index = 5

Forward Citations = 81(Granted Patents)


Location History:

  • Palo Alto, CA (US) (2002 - 2003)
  • San Jose, CA (US) (2003 - 2024)

Company Filing History:

goldMedal10 out of 14,482 
 
Applied Materials, Inc.
 patents

Years Active: 2002-2024

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10 patents (USPTO):Explore Patents
1. 12015042 - Structure and material engineering methods for optoelectronic devices signal to noise ratio enhancement (2024-06-18),
2. 9312154 - CVD apparatus for improved film thickness non-uniformity and particle performance (2016-04-12),
3. 8822312 - Method of forming high growth rate, low resistivity germanium film on silicon substrate (2014-09-02),
4. 8759201 - Method of forming high growth rate, low resistivity germanium film on silicon substrate (2014-06-24),
5. 7335266 - Method of forming a controlled and uniform lightly phosphorous doped silicon film (2008-02-26),
6. 6982214 - Method of forming a controlled and uniform lightly phosphorous doped silicon film (2006-01-03),
7. 6582522 - Emissivity-change-free pumping plate kit in a single wafer chamber (2003-06-24),
8. 6559074 - Method of forming a silicon nitride layer on a substrate (2003-05-06),
9. 6559039 - Doped silicon deposition process in resistively heated single wafer chamber (2003-05-06),
10. 6479100 - CVD ruthenium seed for CVD ruthenium deposition (2002-11-12),

Title: Xianzhi Tao: Innovator in Optoelectronic Device Engineering

Introduction

Xianzhi Tao is a prominent inventor based in San Jose, California, known for his significant contributions to the field of optoelectronic devices. With a total of 10 patents to his name, he has made remarkable advancements in semiconductor technology and material engineering.

Latest Patents

One of Xianzhi Tao's latest patents is titled "Structure and material engineering methods for optoelectronic devices signal to noise ratio enhancement." This innovative method involves fabricating a semiconductor device by forming an interconnect structure over a sensor substrate, thinning the substrate, etching trenches, pre-cleaning the exposed surface, epitaxially growing a charge layer, and forming isolation structures within the trenches. Another notable patent is the "CVD apparatus for improved film thickness non-uniformity and particle performance." This invention provides an improved apparatus for depositing layers on substrates through chemical vapor deposition (CVD), facilitating reduced film thickness non-uniformity, enhanced particle performance, and improved serviceability of process chambers.

Career Highlights

Xianzhi Tao is currently employed at Applied Materials, Inc., a leading company in the semiconductor and materials engineering industry. His work focuses on developing advanced technologies that enhance the performance and reliability of optoelectronic devices.

Collaborations

Throughout his career, Xianzhi has collaborated with talented professionals,

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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