The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2006
Filed:
Oct. 01, 2002
LI Fu, Santa Clara, CA (US);
Sheeba J. Panayil, Santa Clara, CA (US);
Shulin Wang, Campbell, CA (US);
Christopher G. Quentin, Fremont, CA (US);
Lee Luo, Fremont, CA (US);
Aihua Chen, San Jose, CA (US);
Xianzhi Tao, San Jose, CA (US);
Li Fu, Santa Clara, CA (US);
Sheeba J. Panayil, Santa Clara, CA (US);
Shulin Wang, Campbell, CA (US);
Christopher G. Quentin, Fremont, CA (US);
Lee Luo, Fremont, CA (US);
Aihua Chen, San Jose, CA (US);
Xianzhi Tao, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×10atoms/cm.