The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
May. 29, 2012
Yi-chiau Huang, Fremont, CA (US);
Errol Antonio C. Sanchez, Tracy, CA (US);
Xianzhi Tao, San Jose, CA (US);
Yi-Chiau Huang, Fremont, CA (US);
Errol Antonio C. Sanchez, Tracy, CA (US);
Xianzhi Tao, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming a doped semiconductor layer on a substrate is provided. A foundation layer having a crystal structure compatible with a thermodynamically favored crystal structure of the doped semiconductor layer is formed on the substrate and annealed, or surface annealed, to substantially crystallize the surface of the foundation layer. The doped semiconductor layer is formed on the foundation layer. Each layer may be formed by vapor deposition processes such as CVD. The foundation layer may be germanium and the doped semiconductor layer may be phosphorus doped germanium.