The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Feb. 21, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Papo Chen, San Jose, CA (US);

Schubert Chu, San Francisco, CA (US);

Errol Antonio C Sanchez, Tracy, CA (US);

John Timothy Boland, Aptos, CA (US);

Zhiyuan Ye, San Jose, CA (US);

Lori Washington, Union City, CA (US);

Xianzhi Tao, San Jose, CA (US);

Yi-Chiau Huang, Fremont, CA (US);

Chen-Ying Wu, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 31/1892 (2013.01);
Abstract

A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.


Find Patent Forward Citations

Loading…