Yongin-si, South Korea

Won-je Park

USPTO Granted Patents = 10 

Average Co-Inventor Count = 4.7

ph-index = 3

Forward Citations = 31(Granted Patents)


Company Filing History:


Years Active: 2010-2014

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10 patents (USPTO):Explore Patents

Title: The Innovations of Won-je Park

Introduction

Won-je Park is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of image sensor technology, holding a total of 10 patents. His work has been instrumental in advancing the capabilities of image sensors used in various applications.

Latest Patents

Among his latest patents, one notable invention is an image sensor with lightly doped drain (LDD) designed to reduce dark current. This method involves providing a substrate that includes light-receiving and non-light-receiving regions, forming gates on the non-light-receiving region, and ion-implanting dopants to create a pinned photodiode. Another significant patent is for a CMOS image sensor that features a crosstalk prevention structure. This invention includes a P type epitaxial layer formed on an N type substrate, along with a deep P type well layer and an N type deep guardring well, enhancing the performance of the photodiode.

Career Highlights

Won-je Park is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate and develop cutting-edge technologies in image sensors. His expertise and dedication have positioned him as a key figure in the advancement of imaging technology.

Collaborations

Throughout his career, Won-je Park has collaborated with talented individuals such as Young-Hoon Park and Ui-Sik Kim. These collaborations have fostered a creative environment that has led to groundbreaking advancements in their field.

Conclusion

Won-je Park's contributions to image sensor technology exemplify the spirit of innovation and dedication to excellence. His patents reflect a commitment to enhancing the capabilities of imaging systems, making a lasting impact on the industry.

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