The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Jul. 31, 2007
Jong-wook Hong, Seoul, KR;
Tae-seok OH, Seoul, KR;
Duk-min Yi, Yongin-si, KR;
Young-mook OH, Gyeonggi-do, KR;
Won-je Park, Yongin-si, KR;
Jong-Wook Hong, Seoul, KR;
Tae-Seok Oh, Seoul, KR;
Duk-Min Yi, Yongin-si, KR;
Young-Mook Oh, Gyeonggi-do, KR;
Won-Je Park, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.