The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Jan. 24, 2008
Jeong-hoon Bae, Seoul, KR;
Tae-seok OH, Seoul, KR;
Ki-hong Kim, Yongin-si, KR;
Hyoun-min Baek, Yongin-si, KR;
Won-je Park, Yongin-si, KR;
Jung-ho Park, Seoul, KR;
Jeong-hoon Bae, Seoul, KR;
Tae-seok Oh, Seoul, KR;
Ki-hong Kim, Yongin-si, KR;
Hyoun-min Baek, Yongin-si, KR;
Won-je Park, Yongin-si, KR;
Jung-ho Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An image sensor includes a photoelectric conversion section in a semiconductor substrate, the photoelectric conversion section having a capping layer of a first conductivity type and a photodiode of a second conductivity type below the capping layer, the photodiode having an upper surface deeper than about 1 μm, as measured from an upper surface of the semiconductor substrate, a charge detection section receiving charges stored in the photoelectric conversion through a charge transfer section and converting the received charges into respective electrical signals, a voltage application section adapted to apply voltage to the capping layer and to a lower portion of the semiconductor substrate to control a width of a depletion layer on the photodiode, and a signal operation section adapted to generate red, green, and blue, signals according to signals from the charge detection section.