The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Mar. 15, 2010
Young-soo Park, Yongin-si, KR;
Gi-jung Kim, Yongin-si, KR;
Won-je Park, Yongin-si, KR;
Jae-sik Bae, Hwaseong-si, KR;
Young-Soo Park, Yongin-si, KR;
Gi-Jung Kim, Yongin-si, KR;
Won-Je Park, Yongin-si, KR;
Jae-Sik Bae, Hwaseong-si, KR;
SAMSUNG Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of fabricating an epi-wafer includes providing a wafer including boron by cutting a single crystal silicon ingot, growing an insulating layer on one surface of the wafer, performing thermal treatment of the wafer, removing the insulating layer formed on one surface of the wafer, mirror-surface-grinding one surface of the wafer, and growing an epitaxial layer on one surface of the wafer and forming a high-density boron layer within the wafer that corresponds to the interface between the wafer and the epitaxial layer.