Yokohama, Japan

Wenzhen Wang

This inventor holds 15 USPTO granted patents and 22 published patent applications, primarily in Semiconductor Devices. Top assignee: Socionext Inc.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wenzhen Wang. Retrieved from https://idiyas.com/inventor/wenzhen-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 80.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2020-2026

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Areas of Expertise:
Semiconductor Device
Integrated Circuit
Package Structure
Multiple Fins
Substrate
Thermal Management
3D Stacking
TSV Interconnects
Device Architecture
Circuit Design
FinFET Technology
Electrical Performance
15 patents (USPTO):Explore Patents

Title: The Innovative Journey of Inventor Wenzhen Wang

Introduction: Wenzhen Wang is a pioneering inventor based in Yokohama, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Wang's recent patents focus on advancements in artificial intelligence algorithms for autonomous vehicles, with a particular emphasis on enhancing safety and efficiency in urban transportation systems.

Career Highlights: With over two decades of experience in the tech industry, Wang has held key roles in leading research institutions and multinational companies, driving forward cutting-edge projects in robotics, machine learning, and smart city development.

Collaborations: Throughout his career, Wang has collaborated with top engineers, researchers, and industry experts from renowned universities and tech firms worldwide, fostering a culture of innovation and knowledge exchange.

Conclusion: Wenzhen Wang's dedication to pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and shape the future of smart technologies globally.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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