The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Oct. 22, 2021
Applicant:

Socionext Inc., Kanagawa, JP;

Inventors:

Hirotaka Takeno, Yokohama, JP;

Atsushi Okamoto, Yokohama, JP;

Wenzhen Wang, Yokohama, JP;

Assignee:

SOCIONEXT INC., Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6215 (2025.01); H10D 62/299 (2025.01);
Abstract

A semiconductor device includes a substrate; first and second fins protruding from the substrate; a first transistor including the first fin; a second transistor above the first transistor; and a first power supply line electrically connected to the first fin through the second fin. The first transistor includes first and second impurity areas in the first fin, and a first gate insulating film on the first fin between the first and second impurity areas. The second transistor includes a first semiconductor area above the first fin, a third impurity area in the first semiconductor area above the first impurity area, a fourth impurity area in the first semiconductor area above the second impurity area, and a second gate insulating film on the first semiconductor area between the third and fourth impurity areas. The first and second transistors have a common gate on the first and second gate insulating films.


Find Patent Forward Citations

Loading…