The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Apr. 06, 2022
Applicant:

Socionext Inc., Kanagawa, JP;

Inventors:

Atsushi Okamoto, Yokohama, JP;

Wenzhen Wang, Yokohama, JP;

Hirotaka Takeno, Yokohama, JP;

Assignee:

SOCIONEXT INC., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/118 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); H01L 2027/11881 (2013.01); H01L 2027/11892 (2013.01);
Abstract

A semiconductor device includes a first chip including a substrate and a first interconnection layer formed on a first surface of the substrate; and a second interconnection layer formed on a second surface opposite to the first surface of the substrate. The second interconnection layer includes a first power line to which a first power potential is applied, a second power line to which a second power potential is applied, and a first switch connected between the first power line and the second power line. The first chip includes a first grounding line, a third power line to which the second power potential is applied, and a first region in which the first grounding line and the third power line are disposed. In plan view, the first switch overlaps the first region.


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