This inventor holds 51 USPTO granted patents and 18 published patent applications and 1 EPO patent, primarily in High Electron Mobility Transistor. Top assignees: United Microelectronics Corp., Mstar Semiconductor, Inc.. Active years: 2013-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2013-2026
Areas of Expertise:
Title: The Innovations of Wen-Jung Liao in High Electron Mobility Transistors
Introduction
Wen-Jung Liao, a notable inventor based in Hsinchu, Taiwan, has made significant strides in the field of semiconductor technology. With a remarkable portfolio of 44 patents, he has contributed to advancements that are crucial for the development of high-performance electronic devices.
Latest Patents
Among his latest innovations, Liao has developed a high electron mobility transistor (HEMT) and a method for forming the same. This innovative method involves creating a mesa structure that features a channel layer and a barrier layer on a substrate. The process effectively utilizes a unique configuration of edges, where two first edges extend in one direction and two second edges in another. Additionally, a passivation layer is strategically formed, alongside openings that connect to the mesa structure, which enhances the functionality of the transistor. Another significant patent details a semiconductor device that incorporates an enhancement mode high electron mobility transistor. This device comprises a substrate, a group III-V body layer, a group III-V barrier layer, and a recess within the barrier layer, ensuring effective operation in both active and isolation regions.
Career Highlights
Wen-Jung Liao’s professional journey includes key positions in reputable companies such as United Microelectronics Corporation and Mstar Semiconductor, Inc. His work has been dedicated to pushing the boundaries of semiconductor technology, particularly focusing on enhancing the performance of high electron mobility transistors.
Collaborations
Throughout his career, Liao has collaborated with fellow inventors Chun-Ming Chang and Chun-Liang Hou. These collaborations have fostered a productive environment for innovation, allowing for the exchange of ideas and expertise critical to the advancement of their projects.
Conclusion
Wen-Jung Liao stands out as a prolific inventor in the semiconductor industry, with significant contributions that continue to influence technological advancements. His patents not only reflect his ingenuity but also pave the way for the future of high-performance electronic devices, underscoring the importance of innovation in this rapidly evolving field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile