The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Jun. 03, 2024
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Ming Chang, Kaohsiung, TW;
Che-Hung Huang, Hsinchu, TW;
Wen-Jung Liao, Hsinchu, TW;
Chun-Liang Hou, Hsinchu County, TW;
Chih-Tung Yeh, Taoyuan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer, forming a second barrier layer on the first barrier layer, forming a first hard mask on the second barrier layer, removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile