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Hsinchu, Taiwan

Wei-Wen Chen

This inventor holds 7 USPTO granted patents. Top assignee: Macronix International Co., Ltd.. Active years: 2001-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei-Wen Chen. Retrieved from https://idiyas.com/inventor/wei-wen-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7

% Patents Active = 100.0

Average Co-Inventor Count = 1.1

ph-index = 3

Forward Citations = 28(Granted Patents)

Company Filing History:

Macronix International Co., Ltd.

Years Active: 2001-2005

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7 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6916730 - Method for forming a gate (2005-07-12),

2. 6593182 - Method for forming multiple gate oxide layer with the plasma oxygen doping (2003-07-15),

3. 6541350 - Method for fabricating shallow trench isolation (2003-04-01),

4. 6531367 - Method for forming ultra-shallow junction by boron plasma doping (2003-03-11),

5. 6528434 - Method of forming a silicon oxide layer using pulsed nitrogen plasma implantation (2003-03-04),

6. 6383901 - Method for forming the ultra-shallow junction by using the arsenic plasma (2002-05-07),

7. 6326220 - Method for determining near-surface doping concentration (2001-12-04),

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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