The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2002
Filed:
Jan. 25, 2001
Wei-Wen Chen, Hsin-Chu, TW;
Abstract
This invention relates to a method for forming a shallow junction, more particularly, to the method for forming a ultra-shallow junction by using a arsenic plasma doping fashion. The present invention uses the arsenic plasma doping fashion to dope arsenic ions to the junction of the semiconductor and then passes through a post anneal process. The resistance value of the junction can be controlled. The present invention also uses the depth of doped arsenic ions to control the depth of the junction and to restrain the diffusion of the arsenic ions. Then the region of the junction can be reduced successfully to become a ultra-shallow junction. This ultra-shallow junction is a low resistance value and excellent electricity junction.