The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Jan. 25, 2001
Wei-Wen Chen, Hsinchu, TW;
Abstract
A method for forming shallow trench isolation is disclosed. A pad oxide layer and a mask layer are sequentially formed on a substrate. Afterwards, an opening is formed through the mask layer and the pad oxide layer such that regions of the substrate are exposed. Thereafter, the exposed regions are etched to form trenches inside said substrate. Next, nitrogen ions are implanted into the sidewall of the trenches to form a silicon nitride layer, and then a siliconoxynitride layer is formed inside the sidewall of the trenches. Subsequently, a silicon oxide layer is formed on the siliconoxynitride layer and on the mask layer. The excess portion of the silicon oxide layer over said mask layer is removed to expose the mask layer, and then the mask layer is removed away. Finally, the pad oxide layer is removed by using hydrofluoric acid (HF).