Wei-Min Lin

Title: Innovations of Wei-Min Lin in MOS Transistor Technology

Introduction

Wei-Min Lin is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOS transistors. With a total of two patents to his name, Lin's work has advanced the understanding and fabrication of these essential components in modern electronics.

Latest Patents

Wei-Min Lin's latest patents focus on innovative methods for fabricating MOS transistors. One of his patents describes a method for fabricating a MOS transistor that involves the sequential formation of a gate dielectric layer, a first barrier layer, an interlayer, a work-function-dominating layer, a second barrier layer, and a poly-Si layer on a substrate. This method allows for the adjustment of the work function of the work-function-dominating layer and enhances the wetting of the surface of the first barrier layer. The layers are then patterned into a gate, with a source/drain formed in the substrate beside the gate. Another patent details a MOS transistor that includes a substrate, a gate dielectric layer, a stacked gate, and a source/drain in the substrate beside the stacked gate. The stacked gate consists of a first barrier layer, an interlayer, a work-function-dominating layer, a second barrier layer, and a poly-Si layer, with the work-function-dominating layer incorporating a metallic material.

Career Highlights

Wei-Min Lin is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to further his research and development in MOS transistor technology, contributing to advancements in electronic devices.

Collaborations

Lin has collaborated with notable colleagues, including Chih-Wei Yang and Yi-Sheng Hsieh. These partnerships have fostered a collaborative environment that enhances innovation and the development of new technologies.

Conclusion

Wei-Min Lin's contributions to the field of MOS transistors exemplify the importance of innovation in semiconductor technology. His patents reflect a commitment to advancing the capabilities of electronic components, which play a crucial role in modern technology.