The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Nov. 03, 2005
Chih-wei Yang, Kaohsiung County, TW;
Yi-sheng Hsieh, Taichung County, TW;
Wei-min Lin, Hsinchu County, TW;
Wen-tai Chiang, Taipei County, TW;
Wei-tsun Shiau, Kaohsiung County, TW;
Chih-Wei Yang, Kaohsiung County, TW;
Yi-Sheng Hsieh, Taichung County, TW;
Wei-Min Lin, Hsinchu County, TW;
Wen-Tai Chiang, Taipei County, TW;
Wei-Tsun Shiau, Kaohsiung County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a MOS transistor is described. A gate dielectric layer, a first barrier layer, an interlayer, a work-function-dominating layer, a second barrier layer and a poly-Si layer are sequentially formed on a substrate. The interlayer is capable of adjusting the work function of the work-function-dominating layer and wetting the surface of the first barrier layer. The above layers are then patterned into a gate, and a source/drain is formed in the substrate beside the gate.