Taichung County, Taiwan

Yi-Sheng Hsieh


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Sinshe Township, Taichung County, TW (2006)
  • Taichung County, TW (2008)

Company Filing History:


Years Active: 2006-2008

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2 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Yi-Sheng Hsieh and His Contributions to MOS Transistor Technology

Introduction: Yi-Sheng Hsieh, based in Taichung County, Taiwan, is a notable inventor recognized for his significant contributions to the field of semiconductor technology. With two patents to his name, Hsieh has showcased his expertise in designing and fabricating Metal-Oxide-Semiconductor (MOS) transistors, which play a critical role in modern electronics.

Latest Patents: Yi-Sheng Hsieh's latest patents reflect his innovative approach to MOS transistor fabrication. The first patent involves a detailed method for fabricating a MOS transistor, where layers such as a gate dielectric layer, barrier layers, an interlayer, and a work-function-dominating layer are sequentially formed on a substrate. This intricate layering allows for the adjustment of the work function and ensures proper wetting of the barrier layers. The second patent focuses on a MOS transistor that features a substrate with a gate dielectric layer and a stacked gate comprising multiple layers, including a unique work-function-dominating layer made from metallic materials.

Career Highlights: Yi-Sheng Hsieh has made significant strides in his career as an inventor at United Microelectronics Corporation. His role involves pioneering innovative solutions within the semiconductor industry, specifically targeting advancements in transistor technology.

Collaborations: Throughout his career, Hsieh has collaborated with other talented professionals such as Chih-Wei Yang and Wei-Min Lin. These collaborations have fostered a creative and productive environment, allowing for the exchange of ideas and techniques crucial for innovation in semiconductor fabrication.

Conclusion: Yi-Sheng Hsieh stands out as a key figure in the innovation of MOS transistors, with patents that highlight his commitment to enhancing technology in the semiconductor sector. His work not only contributes to United Microelectronics Corporation but also advances the broader field of electronics, ultimately influencing the devices that drive contemporary life.

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