The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Jun. 25, 2004
Chih-wei Yang, Fongshan, TW;
Yi-sheng Hsieh, Sinshe Township, Taichung County, TW;
Wei-min Lin, Jhudong Township, Hsinchu County, TW;
Wen-tai Chiang, Sijhih, TW;
Wei-tsun Shiau, Meinong Township, Kaohsiung County, TW;
Chih-Wei Yang, Fongshan, TW;
Yi-Sheng Hsieh, Sinshe Township, Taichung County, TW;
Wei-Min Lin, Jhudong Township, Hsinchu County, TW;
Wen-Tai Chiang, Sijhih, TW;
Wei-Tsun Shiau, Meinong Township, Kaohsiung County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A MOS transistor including a substrate, a gate dielectric layer on the substrate, a stacked gate on the gate dielectric layer, and a source/drain in the substrate beside the stacked gate is provided. In particular, the stacked gate includes, from bottom to top, a first barrier layer, an interlayer, a work-function-dominating layer, a second barrier layer and a poly-Si layer, wherein the work-function-dominating layer includes a metallic material.