Hsinchu, Taiwan

Wei-Hsin Tsai

USPTO Granted Patents = 5 

Average Co-Inventor Count = 4.3

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021-2024

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5 patents (USPTO):Explore Patents

Title: Innovations of Wei-Hsin Tsai

Introduction

Wei-Hsin Tsai is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. With a total of 5 patents to his name, Tsai has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

One of his latest patents is focused on a semiconductor device, which includes a first metal layer, a second metal layer, a drain/source contact, and at least one conductive via. The first metal layer features a first conductor and a second conductor that are directly adjacent to each other. The second metal layer contains a third conductor that extends in a direction transverse to the first direction. The drain/source contact is connected to the second conductor, and the conductive via connects the first and second conductors through the third conductor. Another notable patent involves an integrated circuit that comprises a first power rail, a conductive structure, and two active regions of transistors. The first power rail is designed to supply a first supply voltage and is located on the back-side of a substrate. The active regions are positioned on the front-side of the substrate and are separated in a different direction.

Career Highlights

Wei-Hsin Tsai is currently employed at Taiwan Semiconductor Manufacturing Company Ltd. His work has significantly impacted the semiconductor industry, particularly in the design and manufacturing of advanced semiconductor devices.

Collaborations

Some of his notable coworkers include Li-Chun Tien and Chih-Liang Chen. Their collaborative efforts have contributed to the success of various projects within the company.

Conclusion

Wei-Hsin Tsai's innovative work in semiconductor technology continues to shape the industry. His patents reflect a deep understanding of complex electronic systems and their manufacturing processes.

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