The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Apr. 15, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Hsin Tsai, Hsinchu, TW;
Jung-Chan Yang, Taoyuan, TW;
Ting-Yu Chen, Hsinchu, TW;
Li-Chun Tien, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first group of semiconductor fins arranged at a first fin-to-fin spacing and a second group of semiconductor fins arranged at a second fin-to-fin spacing. The first and second groups of semiconductor fins are separated by a fin-free region larger than the first and second fin-to-fin spacings. The semiconductor device further includes a gate structure extending across the first and second group of semiconductor fins, a Vdd line and a Vss line extending across the gate structure. The first and second groups of semiconductor fins are between the Vdd line and the Vss line from a top view, and an overlapping area between the Vdd line and the first group of semiconductor fins is different from an overlapping area between the Vss line and the second group of semiconductor fins from the top view.