The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Jul. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Hsin Tsai, Hsinchu, TW;

Hui-Zhong Zhuang, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Li-Chun Tien, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/823871 (2013.01); H01L 23/5226 (2013.01); H01L 27/092 (2013.01);
Abstract

A semiconductor device, includes a first metal layer, a second metal layer, and at least one conductive via. The first metal layer has a first conductor that extends in a first direction and a second conductor that extends in the first direction, wherein the second conductor is directly adjacent to the first conductor. The second metal layer has a third conductor that extends in a second direction, wherein the second direction is transverse to the first direction. The at least one conductive via connects the first conductor and the second conductor through the third conductor.


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