The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Mar. 09, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Guo-Huei Wu, Hsinchu, TW;

Pochun Wang, Hsinchu, TW;

Wei-Hsin Tsai, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Li-Chun Tien, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 21/768 (2013.01); H01L 23/5226 (2013.01); H01L 27/092 (2013.01);
Abstract

An integrated circuit includes a first power rail, a second power rail, a signal line and a first active region of a first set of transistors. The first power rail is on a back-side of a substrate, and extends in a first direction. The second power rail is on the back-side of the substrate, extends in the first direction, and is separated from the first power rail in a second direction different from the first direction. The signal line is on the back-side of the substrate, and extends in the first direction, and is between the first power rail and the second power rail. The first active region of the first set of transistors extends in the first direction, and is on a first level of a front-side of the substrate opposite from the back-side.


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