Hsinchu, Taiwan

Wei Feng Lin

This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: Silicon Integrated Systems Corporation. Active years: 2001-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei Feng Lin. Retrieved from https://idiyas.com/inventor/wei-feng-lin-gs0mnb8c

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 4 

% Patents Active = 75.0

Average Co-Inventor Count = 2.2

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Taipei, TW (2001)
  • Hsinchu, TW (2004 - 2007)

Company Filing History:


Years Active: 2001-2007

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4 patents (USPTO):Explore Patents

Title: Wei Feng Lin: Innovator in Semiconductor Technology

Introduction

Wei Feng Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on developing advanced semiconductor devices and substrates, which are crucial for modern electronic applications.

Latest Patents

Wei Feng Lin's latest patents include innovative designs for semiconductor devices and substrates. One of his notable inventions is a substrate used in a semiconductor device. This substrate features a first wiring layer, a second wiring layer, and an interconnection-wiring layer. The first wiring layer contains multiple first pads, while the second wiring layer includes several second pads. The interconnection-wiring layer is strategically placed between the first and second wiring layers. In this design, at least one of the second pads, which does not electrically connect to any of the first pads, is connected to the interconnection-wiring layer. Additionally, a shielding portion is provided around the second pad to enhance electrical connectivity. Another significant patent involves a semiconductor package substrate that comprises a substrate, a chip contact area, an inner pad portion, an outer pad portion, and a conductive layer. This design ensures that the outer pad portion encloses the inner pad portion, which surrounds the chip contact area at the center of the substrate.

Career Highlights

Wei Feng Lin is currently associated with Silicon Integrated Systems Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Wei Feng Lin has collaborated with notable colleagues, including Chung Ju Wu and Wen-Yu Lo. Their combined expertise has contributed to the successful development of various semiconductor technologies.

Conclusion

Wei Feng Lin's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative designs continue to shape the future of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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