Taipei, Taiwan

Wei-Che Hsieh

This inventor holds 18 USPTO granted patents and 5 published patent applications and 1 EPO patent, primarily in Semiconductor Manufacturing. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Carnegie Mellon University, National Taiwan University of Science and Technology. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei-Che Hsieh. Retrieved from https://idiyas.com/inventor/wei-che-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 88.9

 

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Taipei, TW (2015 - 2024)
  • New Taipei, TW (2015 - 2024)

Company Filing History:


Years Active: 2015-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
EUV Photo Masks
Semiconductor Device
Field-Effect Transistor
Silicon Nitride Layer
Photosensitive Material
Lithography
LED Lamp
Light Harvesting Lens
Film Formation
Wafer Processing
Nucleic Acid Targeting
Gate Spacer Structure
18 patents (USPTO):Explore Patents

Title: Innovations by Wei-Che Hsieh: Pioneering Advances in Semiconductor Technology

Introduction

Wei-Che Hsieh is an accomplished inventor based in New Taipei, Taiwan, with a remarkable portfolio of 14 patents to his name. His contributions to the semiconductor industry have been pivotal, particularly in the methods for fabricating advanced materials and devices.

Latest Patents

Among his latest innovations, Wei-Che Hsieh developed a patent titled "Forming low-stress silicon nitride layer through hydrogen treatment." This method comprises placing a wafer into a process chamber, followed by the deposition of a silicon nitride layer on the wafer's base layer. The procedure involves introducing a silicon-containing precursor into the chamber, subsequently purging it, then introducing hydrogen radicals, followed by another purge before introducing a nitrogen-containing precursor. This meticulous process enhances the quality of the silicon nitride layer, which is critical for semiconductor applications.

Another significant patent from Hsieh is titled "Field-effect transistor device with gate spacer structure." This invention provides semiconductor devices and outlines methods for their formation. It includes a process where a semiconductor element is formed over a substrate, featuring a channel region and a source/drain region. The innovation consists of forming a dummy gate stack and layering spacers to enhance the device's performance, showcasing Hsieh's expertise in refining semiconductor technology.

Career Highlights

Wei-Che Hsieh has made substantial contributions during his career, particularly while working with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor fabrication industry. His work is recognized for its innovative approach to enhancing semiconductor performance and manufacturing processes.

Collaborations

Throughout his career, Hsieh has collaborated with esteemed professionals, including Chunyao Wang and Tze-Liang Lee. Their collective efforts have fostered advancements in semiconductor technologies and processes, strengthening the foundations of modern electronics.

Conclusion

Wei-Che Hsieh stands out as a pivotal figure in the field of semiconductor innovation, with a significant number of patents that demonstrate his dedication to advancing technology. His latest inventions not only reflect his technical prowess but also contribute to the broader advancements in the semiconductor industry. As technology continues to evolve, the contributions of inventors like Hsieh will undoubtedly pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…