The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Oct. 05, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu Chao Lin, Hsinchu, TW;
Chao-Cheng Chen, Hsinchu, TW;
Hao-Ming Lien, Hsinchu, TW;
Wei-Che Hsieh, New Taipei, TW;
Chun-Hung Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In an embodiment, a method includes: patterning a plurality of mandrels over a mask layer; forming an etch coating layer on top surfaces of the mask layer and the mandrels; depositing a dielectric layer over the mask layer and the mandrels, a first thickness of the dielectric layer along sidewalls of the mandrels being greater than a second thickness of the dielectric layer along the etch coating layer; removing horizontal portions of the dielectric layer; and patterning the mask layer using remaining vertical portions of the dielectric layer as an etching mask.